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| Ordering number : ENN5443A 2SK2617LS N-Channl Silicon MOSFET 2SK2617LS Ultrahigh-Speed Switching Applications Features * * Package Dimensions unit : mm 2078C [2SK2617LS] 10.0 3.2 4.5 2.8 Low ON-resistance. Low Qg. 3.5 7.2 16.1 16.0 3.6 0.9 1.2 1.2 0.75 14.0 0.7 123 2.4 1 : Gate 2 : Drain 3 : Source SANYO : TO-220FI(LS) Specifications Absolute Maximum Ratings at Ta=25C Parameter Drain-to-Source Voltage Gate-to-Source Voltage Drain Current (DC) Drain Current (Pulse) Allowable Power Dissipation Channel Temperature Storage Temperature Symbol VDSS VGSS ID IDP PD Tch Tstg Tc=25C Conditions 2.55 2.55 0.6 Ratings 500 30 4 16 2.0 25 150 --55 to +150 Unit V V A A W W C C Electrical Characteristics at Ta=25C Parameter Drain-to-Source Breakdown Voltage Zero-Gate Voltage Drain Current Gate-to-Source Leakage Current Cutoff Voltage Forward Transfer Admittance Symbol V(BR)DSS IDSS IGSS VGS(off) yfs Conditions ID=1mA, VGS=0 VDS=500V, VGS=0 VGS=30V, VDS=0 VDS=10V, ID=1mA VDS=10V, ID=2A Ratings min 500 1.0 100 3.5 1.1 2.2 5.5 typ max Unit V mA nA V S Marking : K2617 Continued on next page. Any and all SANYO products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your SANYO representative nearest you before using any SANYO products described or contained herein in such applications. SANYO assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all SANYO products described or contained herein. SANYO Electric Co.,Ltd. Semiconductor Company TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN 22004 TS IM TA-100437 No.5443-1/4 2SK2617LS Continued from preceding page. Parameter Static Drain-to-Source On-State Resistance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Turn-ON Delay Time Rise Time Turn-OFF Delay Time Fall Time Diode Forward Voltage Symbol RDS(on) Ciss Coss Crss Qg td(on) tr td(off) tf VSD Conditions ID=2A, VGS=15V VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=20V, f=1MHz VDS=200V, ID=4A, VGS=10V See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. See specified Test Circuit. IS=4A, VGS=0 Ratings min typ 1.2 550 190 95 15 15 15 45 25 0.95 1.2 max 1.6 Unit pF pF pF nC ns ns ns ns V Switching Time Test Circuit VDD=200V VGS=15V D PW=1s D.C.0.5% ID=2A RL=100 VOUT G P.G RGS 50 2SK2617LS S 7 ID -- VDS Tc=25C 10V 15V 8V Drain Current, ID -- A 8 7 6 5 ID -- VGS VDS=10V Tc= --25C 6 Drain Current, ID -- A 5 25C 4 75C 4 3 2 1 0 3 2 7V 1 VGS=6V 0 0 2 4 6 8 1.0 IT05191 0 5 10 15 20 IT05192 Drain-to-Source Voltage, VDS -- V 4.0 RDS(on) -- VGS Drain-to-Source Voltage, VDS -- V 3.4 RDS(on) -- Tc Tc=25C Static-Drain-to-Source On-State Resistance, RDS(on) -- m Static-Drain-to-Source On-State Resistance, RDS(on) -- m 3.1 2.8 2.5 2.2 1.9 1.6 1.3 1.0 0.7 0.4 0.1 --50 --25 0 25 50 75 100 125 IT05194 3.5 3.0 2.5 2.0 1.5 2A ID=4A 1A 0V =1 V V GS 15 A, =2 S= ID VG A, =2 ID 1.0 0.5 0 2 4 6 8 10 12 14 16 18 20 Gate-to-Source Voltage, VGS -- V IT05193 Case Temperature, Tc -- C No.5443-2/4 2SK2617LS 10 yfs -- ID VDS=10V Forward Transfer Admittance, yfs -- S 7 5 3 2 100 7 5 3 2 IF -- VSD VGS=0 1.0 7 5 3 2 0.1 0.1 5C --2 5C Tc= 2 C 75 Forward Current, IF -- A 10 7 5 3 2 1.0 7 5 3 2 0.1 7 5 3 2 0.01 7 5 3 2 0.001 2 3 5 7 1.0 2 3 5 Drain Current, ID -- A 100 7 10 IT05195 3 2 10 7 5 0 0.3 Tc= 7 5C 25 C --25 C 0.6 0.9 1.2 1.5 IT05196 SW Time -- ID Diode Forward Voltage, VSD -- V ASO 7 VDD=200V VGS=15V IDP=16A ID=4A 10 Switching Time, SW Time -- ns <1s 10 s 0 s Drain Current, ID -- A 5 td (off) 3 2 1.0 7 5 3 2 0.1 7 5 3 2 1m 10 m DC 100 s op ms era Operation in this area tio n is limited by RDS(on). s 3 tf tr 2 10 7 7 1.0 2 td(on) 3 5 7 IT05197 0.01 1.0 Tc=25C Single pulse 2 3 5 7 10 2 3 5 7 100 2 3 5 7 Drain Current, ID -- A 2.5 Drain-to-Source Voltage, VDS -- V 35 IT05198 PD -- Ta PD -- Tc Allowable Power Dissipation, PD -- W Allowable Power Dissipation, PD -- W 30 2.0 25 1.5 20 1.0 15 10 0.5 5 0 0 0 20 40 60 80 100 120 140 160 0 20 40 60 80 100 120 140 160 Ambient Temperature, Ta -- C IT05199 Case Temperature, Tc -- C IT05120 No.5443-3/4 2SK2617LS Specifications of any and all SANYO products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. When designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. In the event that any or all SANYO products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. No part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of SANYO Electric Co., Ltd. Any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification" for the SANYO product that you intend to use. Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. SANYO believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. This catalog provides information as of February, 2004. Specifications and information herein are subject to change without notice. PS No.5443-4/4 This datasheet has been download from: www..com Datasheets for electronics components. |
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